Electrostatic chuck to limit particle deposits thereon
US7583491B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 18, 2006 |
| Grant date | Sep 1, 2009 |
| Priority date | — |
| Expiry date | May 18, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31705
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An ion implanter includes an electrostatic chuck. The electrostatic chuck is configured to repel charged particles from a surface of the electrostatic chuck to limit deposits of the charged particles on the surface when the electrostatic chuck is not supporting any workpiece. An electrostatic chuck including a dielectric layer and at least one electrode is also provided. The at least one electrode is configured to accept a DC voltage signal to produce a first charge to repel charged particles from the dielectric layer when the dielectric layer is not supporting any workpiece to thereby limit deposits of the charged particles on the dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.