Magnetic tunnel junction devices and magnetic random access memory
US7583529B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 16, 2007 |
| Grant date | Sep 1, 2009 |
| Priority date | — |
| Expiry date | Jul 3, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/935
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic random access memory (MRAM) is disclosed. The MRAM includes a first electrode, an antiferromagnetic layer formed over the first electrode, a pinned layer formed over the antiferromagnetic layer, a barrier layer formed over the pinned layer, a composite free layer formed over the barrier layer, and a second electrode formed over the composite free layer. The composite free layer includes a first magnetic layer, a spacer layer and a second magnetic layer sequentially stacked over the barrier layer and the spacer layer allows parallel coupling between the first and second magnetic layers. A magnetic tunnel junction (MTJ) device suitable for a memory unit of a magnetic memory device is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.