Vertical cavity surface emitting semiconductor laser device
US7583714B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 27, 2007 |
| Grant date | Sep 1, 2009 |
| Priority date | — |
| Expiry date | Feb 27, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34306
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The relationship between the reflectivity characteristic of a DBR layer(s), in which an InP layer and an InGaAlAs layer are laminated alternatively, and the optical absorption characteristic of the InGaAlAs layer, is a trade-off in a vertical cavity surface emitting laser on an InP substrate. The present invention applies a semiconductor DBR layer(s), in which an InP layer and an InGaAlAs-MQW (multi-quantum-wells) layer are laminated alternatively, in order to dissolve the above trade-off. The InGaAlAs-MQW layer is composed of InGaAlAs-wells and barriers. The InP layer is doped uniformly and the InGaAlAs-MQW layer has a structure in which at least a part thereof is doped.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.