Method of fabricating a diaphragm of a capacitive microphone device
US7585417B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 23, 2006 |
| Grant date | Sep 8, 2009 |
| Priority date | — |
| Expiry date | Apr 29, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04R31/003
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a diaphragm of a capacitive microphone device is provided. First, a substrate is provided, and a dielectric layer is formed on a first surface of the substrate. Than, a plurality of silicon spacers are formed on a surface of the dielectric layer, and the dielectric layer is patterned to form a plurality of dielectric bumps. Subsequently, a diaphragm layer is formed on a surface of the silicon spacers, a surface of the dielectric bumps, and the first surface of the substrate so that the diaphragm layer has a corrugate structure by virtue of the dielectric bumps. Thereafter, a planarization layer is formed on the diaphragm layer, and a second surface of the substrate is etched to form a plurality of openings corresponding to the corrugate structure. Following that, the dielectric bumps exposed through the openings are removed, and the planarization layer is removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.