Sub-lithographic imaging techniques and processes
US7585614B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 20, 2004 |
| Grant date | Sep 8, 2009 |
| Priority date | — |
| Expiry date | Nov 10, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of patterning which provides images substantially smaller than that possible by lithographic techniques is provided. In the method of the invention, a substrate has a memory layer and a sacrificial layer formed thereon. An image is patterned onto the memory layer by protecting an edge during an etching step using chemical oxide removal (COR) processes, for example. Another edge is memorized in the layer. The sacrificial layer is removed to expose another memorized edge, which is used to define a pattern in an underlying layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.