Method for fabricating semiconductor device having bulb-shaped recess gate
US7585727B2 · kind B2 · utility
2Cited by
4References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 28, 2006 |
| Grant date | Sep 8, 2009 |
| Priority date | — |
| Expiry date | Jul 30, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor device includes etching a portion of a substrate to form a recess. A polymer layer fills a lower portion of the recess. Sidewall spacers are formed over the recess above the lower portion of the recess. The polymer layer is removed. The lower portion of the recess is isotropically etching to form a bulb-shaped recess.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.