Methods of fabricating integrated circuit devices using anti-reflective coating as implant blocking layer
US7585763B2 · kind B2 · utility
0Cited by
8References
15Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Nov 7, 2005 |
| Grant date | Sep 8, 2009 |
| Priority date | — |
| Expiry date | Dec 13, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0177
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A patterned anti-reflective coating may be used as a selective implant-blocking layer during fabrication of an integrated circuit transistor. In particular, the anti-reflective coating may be used as a gate sidewall spacer to block at least some dopants from an integrated circuit substrate beneath the gate sidewall spacer. Moreover, a single mask may be used when fabricating source and drain extension regions and source and drain regions of an integrated circuit transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.