Formation of oxidation-resistant seed layer for interconnect applications
US7585765B2 · kind B2 · utility
8Cited by
7References
16Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 15, 2007 |
| Grant date | Sep 8, 2009 |
| Priority date | — |
| Expiry date | Nov 12, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An interconnect structure of the single or dual damascene type and a method of forming the same, which substantially reduces the surface oxidation problem of plating a conductive material onto a noble metal seed layer are provided. In accordance with the present invention, a hydrogen plasma treatment is used to treat a noble metal seed layer such that the treated noble metal seed layer is highly resistant to surface oxidation. The inventive oxidation-resistant noble metal seed layer has a low C content and/or a low nitrogen content.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.