Ion implanter having combined hybrid and double mechanical scan architecture
US7586111B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 31, 2007 |
| Grant date | Sep 8, 2009 |
| Priority date | — |
| Expiry date | Mar 24, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31706
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A system and method are provided for implanting ions into a workpiece in a plurality of operating ranges. A desired dosage of ions is provided, and a spot ion beam is formed from an ion source and mass analyzed by a mass analyzer. Ions are implanted into the workpiece in one of a first mode and a second mode based on the desired dosage of ions, where in the first mode, the ion beam is scanned by a beam scanning system positioned downstream of the mass analyzer and parallelized by a parallelizer positioned downstream of the beam scanning system. In the first mode, the workpiece is scanned through the scanned ion beam in at least one dimension by a workpiece scanning system. In the second mode, the ion beam is passed through the beam scanning system and parallelizer un-scanned, and the workpiece is two-dimensionally scanned through the spot ion beam.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.