Resist material and pattern formation method
US7588876B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 13, 2005 |
| Grant date | Sep 15, 2009 |
| Priority date | — |
| Expiry date | May 27, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/108
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A resist material includes a base polymer containing a compound having a unit represented by a general formula of the following Chemical Formula 1:wherein R1, R2 and R3 are the same or different and are a hydrogen atom, a fluorine atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; R4 is a straight-chain alkylene group or a branched or cyclic alkylene group with a carbon number not less than 0 and not more than 20; R5 is a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid; and R6 is a group having a cyclic ester compound, a group having an alicyclic compound including a hydroxyl group or a group having a compound including hexafluoroisopropyl alcohol.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.