Power LDMOS transistor
US7589378B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 20, 2007 |
| Grant date | Sep 15, 2009 |
| Priority date | — |
| Expiry date | Jun 8, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/663
Abstract
A laterally diffused metal-oxide-semiconductor transistor device includes a substrate having a first conductivity type with a semiconductor layer formed over the substrate. A source region and a drain extension region of the first conductivity type are formed in the semiconductor layer. A body region of a second conductivity type is formed in the semiconductor layer. A conductive gate is formed over a gate dielectric layer that is formed over a channel region. A drain contact electrically connects the drain extension region to the substrate and is laterally spaced from the channel region. The drain contact includes a highly-doped drain contact region formed between the substrate and the drain extension region in the semiconductor layer, wherein a topmost portion of the highly-doped drain contact region is spaced from the upper surface of the semiconductor layer. A source contact electrically connects the source region to the body region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.