Patent · US Active

Optical transceiver integratable with silicon VLSI

US7589882B2 · kind B2 · utility

1Cited by

3References

34Claims

0Family size

Assignee

The Regents of the University of California · US

Inventors

Ya-Hong Xie · Flemington, US
Bin Shi · Hong Kong, CN

Key dates

Filing date	Oct 11, 2007
Grant date	Sep 15, 2009
Priority date	—
Expiry date	Oct 11, 2027

Classification

Technology area (CPC G)Physics
CPC primaryG02F1/213
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A modulator for an optical transceiver is disclosed. The modulator has two quarter-wave stack mirrors composed of alternating dielectric layers with an optically absorbing layer sandwiched in between to form the vertical resonant cavity. The optically absorbing layer is made of semiconductor nanocrystals embedded in a dialectic material. The device is configured to operate near the saturation point of the absorption layer. By adjusting the biasing voltage across the absorption layer, the saturation threshold of the semiconductor nanocrystals is altered, resulting in the overall reflectivity of the resonant cavity to vary. The modulator is configured to be fabricated as the extension of the backend process of Si CMOS.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.