Distributed electrostatic discharge protection circuit with varying clamp size
US7589945B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2006 |
| Grant date | Sep 15, 2009 |
| Priority date | — |
| Expiry date | Jul 10, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An integrated circuit includes a first I/O cell disposed at a substrate, the first I/O cell including a first electrostatic discharge (ESD) clamp transistor device. The first ESD clamp transistor device includes a control electrode, a first current electrode coupled to a first voltage reference bus, and second current electrode coupled to a second voltage reference bus. The first ESD clamp transistor device has a first channel width. The integrated circuit further includes a second I/O cell including a second ESD clamp transistor device. The second ESD clamp transistor device includes a control electrode, a first current electrode coupled to the first voltage reference bus, and second current electrode coupled to the second voltage reference bus. The second ESD clamp transistor device has a second channel width different than the first channel width.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.