Method for fine pattern formation
US7592132B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2005 |
| Grant date | Sep 22, 2009 |
| Priority date | — |
| Expiry date | Sep 16, 2025 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC09K2323/00
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a method of effectively miniaturizing a resist pattern, a super fine pattern-forming method of restricting a film thickness of a crosslinked film and also preventing developing defects is provided using a super fine pattern-forming material which contains a solvent composed of a water-soluble resin, a water-soluble crosslinking agent, and water or a mixing solution of water and a water-soluble organic solvent, and an amine compound-containing developing solution. The amine compound-containing developing solution is preferably a primary amine compound such as polyallylamine, monomethanolamine, and monoethanolamine, a secondary amine compound such as dimethylamine, diethylamine, dimethanolamine, and diethanolamine, a tertiary amine compound such as trimethylamine, triethylamine, trimethanolamine, and triethanolamine, or a quartenary amine compound such as hydrated tetramethylamine.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.