Manufacturing equipment using ION beam or electron beam
US7592606B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 18, 2007 |
| Grant date | Sep 22, 2009 |
| Priority date | — |
| Expiry date | Dec 18, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31745
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Provided is a charged particle beam processing apparatus capable of improving yields by suppressing the spread of metal pollution to a semiconductor manufacturing process to a minimum. The charged particle beam processing apparatus includes an ion beam column 1 that is connected to a vacuum vessel 10 and irradiates a sample 35 with an ion beam 11 of nonmetal ion species, a microsampling unit 3 having a probe 16 that extracts a microsample 43 cut out from a sample 35 by the ion beam 11, a gas gun 2 that discharges a gas for bonding the microsample 43 and the probe 16, a pollution measuring beam column 6A that is connected to the same vacuum vessel 10 to which the ion beam column 1 is connected and irradiates an ion beam irradiation traces by the ion beam column 1 with a pollution measuring beam 13, and a detector 7 that detects characteristic X-rays emitted from the ion beam irradiation traces by the ion beam column 1 upon irradiation with the pollution measuring beam 13.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.