Semiconductor device with a SiGe layer having uniaxial lattice strain
US7592646B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 27, 2006 |
| Grant date | Sep 22, 2009 |
| Priority date | — |
| Expiry date | Mar 27, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6748
Abstract
A semiconductor device includes a MIS transistor. The device includes a buried insulating film formed in one part of a substrate, the buried insulating film being elongated in a gate-width direction and shortened in a gate-length direction of the MIS transistor. A first semiconductor layer is formed on the buried insulating film and has uniaxial lattice strain. A second semiconductor layer covers both sides of the buried insulating film and both sides of the first semiconductor layer, the sides being opposite in the gate-length direction. A gate electrode is formed on the first semiconductor layer with a gate insulating film being formed between the gate electrode and the first semiconductor layer. A source region and a drain region are formed in the second semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.