Toshinori Numata
24Patents
7h-index
20Co-inventors
69Inventor score
Filing activity: May 18, 1999 → Oct 31, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6043536A | Semiconductor device | Electricity | 87 | Expired |
| US9698272B1 | Transistor and semiconductor memory device | Electricity | 80 | Active |
| US7622773B2 | Semiconductor device including multi-gate metal-insulator-semiconductor (MIS) transistor | Electricity | 31 | Active |
| US7619239B2 | Semiconductor device and method of manufacturing the same | Electricity | 16 | Active |
| US8492219B2 | Semiconductor device manufacturing method | Electricity | 11 | Active |
| US8710485B2 | Semiconductor device and method of manufacturing the same | Electricity | 11 | Active |
| US9806082B2 | Semiconductor memory device including a sense amplifier on a semiconductor substrate, a memory cell including a capacitor and a transistor including conductive lines electrically connected to the sense amplifier | Physics | 9 | Active |
| US10056150B2 | Non-volatile semiconductor memory device | Electricity | 6 | Active |
| US9530891B2 | Semiconductor device and method of manufacturing the same | Electricity | 5 | Active |
| US8932915B2 | Semiconductor device and method for manufacturing the same | Electricity | 5 | Active |
| US10049720B2 | Dynamic random access memory (DRAM) | Physics | 4 | Active |
| US9978441B2 | Semiconductor memory device | Electricity | 4 | Active |
| US8518769B2 | Semiconductor device and method of manufacturing the same | Electricity | 4 | Active |
| US9755055B2 | Semiconductor device and method for manufacturing the same | Electricity | 3 | Active |
| US10367054B2 | Semiconductor memory device | Electricity | 3 | Active |
| US10510862B2 | Semiconductor memory device | Electricity | 2 | Active |
| US7592646B2 | Semiconductor device with a SiGe layer having uniaxial lattice strain | Electricity | 1 | Expired |
| US8669162B2 | Semiconductor device and method of manufacturing the same | Electricity | 1 | Active |
| US8994087B2 | Semiconductor device and method for manufacturing the same | Electricity | 0 | Active |
| US8907406B2 | Transistor having impurity distribution controlled substrate and method of manufacturing the same | Electricity | 0 | Active |
| US9111965B2 | Semiconductor device and method of manufacturing the same | Electricity | 0 | Active |
| US10332581B2 | Semiconductor memory device | Physics | 0 | Active |
| US8999801B2 | Nanowire channel field effect device and method for manufacturing the same | Electricity | 0 | Active |
| US11380773B2 | Ferroelectric memory device | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.