Method for producing a doped nitride film, doped oxide film and other doped films

US7595010B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Ashima B. Chakravarti · Hopewell Junction, US
• Judson R. Holt · Wappingers Falls, US
• Kevin K. Chan · Staten Island, US
• Sadanand V. Deshpande · Fishkill, US
• Rangarajan Jagannathan · Hopewell Junction, US

Key dates

• Filing date: Oct 26, 2007
• Grant date: Sep 29, 2009
• Expiry date: Oct 26, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/601
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Adding at least one non-silicon precursor (such as a germanium precursor, a carbon precursor, etc.) during formation of a silicon nitride, silicon oxide, silicon oxynitride or silicon carbide film improves the deposition rate and/or makes possible tuning of properties of the film, such as tuning of the stress of the film. Also, in a doped silicon oxide or doped silicon nitride or other doped structure, the presence of the dopant may be used for measuring a signal associated with the dopant, as an etch-stop or otherwise for achieving control during etching.