Method of forming the semiconductor device
US7595253B2 · kind B2 · utility
0Cited by
5References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 8, 2007 |
| Grant date | Sep 29, 2009 |
| Priority date | — |
| Expiry date | Jun 18, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76229
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Example embodiments provide a semiconductor device and a method of forming the same. According to the method, a capping insulation pattern may be formed to cover the top surface of a filling insulation pattern in a trench. The capping insulation pattern may have an etch selectivity according to the filling insulation pattern. As a result, the likelihood that the filling insulation layer may be etched by various cleaning processes and the process removing the buffer insulation pattern may be reduced or prevented.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.