Power device with trenches having wider upper portion than lower portion
US7595524B2 · kind B2 · utility
22Cited by
244References
31Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 17, 2008 |
| Grant date | Sep 29, 2009 |
| Priority date | — |
| Expiry date | Mar 17, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/905
Abstract
A field effect transistor includes a plurality of trenches extending into a silicon layer. Each trench has upper sidewalls that fan out. Contact openings extend into the silicon layer between adjacent trenches such that each trench and an adjacent contact opening form a common upper sidewall portion. Body regions extend between adjacent trenches, and source regions extend in the body regions adjacent opposing sidewalls of each trench. The source regions have a conductivity type opposite that of the body regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.