Integrated circuit capacitor having antireflective dielectric

US7595525B2 · kind B2 · utility

Assignee

• TEXAS INSTRUMENTS INCORPORATED · US

Inventors

• Bill Wofford · Dallas, US
• Blake Ryan Pasker · Wylie, US
• Xinfen Chen · Plano, US
• Binghua Hu · Plano, US

Key dates

• Filing date: Sep 5, 2006
• Grant date: Sep 29, 2009
• Expiry date: Sep 5, 2026

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/952

Abstract

A capacitor (100) is disclosed that is formed as part of an integrated circuit (IC) fabrication process. The capacitor (100) has conductive top and bottom electrodes (140, 144) and a nonconductive capacitor dielectric (142). In one example, the dielectric (142) includes first and second thin dielectric layers (112, 114) that sandwich a layer of antireflective material (118). The thin layers (112, 114) provide the dielectric behavior necessary for the capacitor while the antireflective layer (118) promotes reduced feature sizes by mitigating reflected standing waves, among other things.