Semiconductor device
US7595531B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 22, 2007 |
| Grant date | Sep 29, 2009 |
| Priority date | — |
| Expiry date | Dec 27, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/117
Abstract
A semiconductor device according to one embodiment of the present invention includes: a semiconductor substrate having an operation layer on the top surface thereof; a source electrode and a drain electrode disposed on the operation layer; a gate electrode disposed between the source electrode and the drain electrode; and a field plate electrode disposed on an insulating film deposited between the gate electrode and the drain electrode. At least a part of the gate electrode is disposed in a gate recess formed in the operation layer, the field plate electrode is apart from the gate electrode by a predetermined distance, and at least a part of the field plate electrode is disposed in a field plate recess formed in the operation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.