Semiconductor device
US7596014B2 · kind B2 · utility
10Cited by
3References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 17, 2007 |
| Grant date | Sep 29, 2009 |
| Priority date | — |
| Expiry date | Oct 10, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1693
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In a memory using spin transfer torque, state of the spin is made unstable by applying a weak pulse before rewriting to reduce rewrite current. Reading of high-speed operation is performed with current in a regime where the current becomes non-linearly increases corresponding to the pulse width to suppress disturb. Further, fluctuation of respective memory cells is suppressed by a driving method setting the amount of spin constant by bit line charge to suppress read disturb.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.