Program method of non-volatile memory device
US7596026B2 · kind B2 · utility
10Cited by
9References
8Claims
0Family size
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Key dates
| Filing date | Feb 26, 2007 |
| Grant date | Sep 29, 2009 |
| Priority date | — |
| Expiry date | Feb 26, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3427
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A program method of a non-volatile memory device comprises setting a string select line to a predetermined voltage, setting a selected word line to a program voltage and unselected word lines to a pass voltage respectively. The program voltage is varied according to an arrangement of the selected word line. Problems arising from capacitive coupling between adjacent signal lines are alleviated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.