Patent · US Active

Method and structure of germanium laser on silicon

US7596158B2 · kind B2 · utility

27Cited by

6References

25Claims

0Family size

Assignee

Massachusetts Institute of Technology · US

Inventors

Jifeng Liu · Hanover, US
Dong Pan · Taipei, TW
Lionel C. Kimerling · Concord, US
Jurgen Michel · Cambridge, US
Sajan Saini · Somerville, US

Key dates

Filing date	Oct 26, 2006
Grant date	Sep 29, 2009
Priority date	—
Expiry date	Oct 26, 2026

Classification

Technology area (CPC H)Electricity
CPC primaryH01S5/3427
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A laser structure includes at least one active layer having doped Ge so as to produce light emissions at approximately 1550 nm from the direct band gap of Ge. A first confinement structure is positioned on a top region of the at least one active layer. A second confinement structure is positioned on a bottom region the at least one active layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.