Patent · US Active

Method for wafer level packaging and fabricating cap structures

US7598125B2 · kind B2 · utility

4Cited by
2References
13Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 26, 2006
Grant dateOct 6, 2009
Priority date
Expiry dateOct 6, 2026

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/16235
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A cap wafer with cavities is etched through areas not covered by a patterned photoresist to form a plurality of openings. The cap wafer is bonded to a transparent wafer at the surface having the cavities and is segmented around the cavities to form a plurality of cap structures. The cap structures are hermetically sealed to a device wafer to form hermetic windows over devices and pads located on the device wafer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.