Active photosensitive structure with buried depletion layer
US7598132B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 5, 2007 |
| Grant date | Oct 6, 2009 |
| Priority date | — |
| Expiry date | Aug 29, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/2863
Abstract
An imager pixel has a photosensitive JFET structure having a channel region located above a buried charge accumulation region. The channel region has a resistance characteristic that changes depending on the level of accumulated charge in the accumulation region. During an integration period, incident light causes electrons to be accumulated inside the buried accumulation region. The resistance characteristic of the channel region changes in response to a field created by the charges accumulated in the accumulation region. Thus, when a voltage is applied to one side of the channel, the current read out from the other side is characteristic of the amount of stored charges.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.