Patent · US Active

Post-seed deposition process

US7598163B2 · kind B2 · utility

23Cited by
15References
20Claims
0Family size

Inventors

Key dates

Filing dateFeb 15, 2007
Grant dateOct 6, 2009
Priority date—
Expiry dateFeb 15, 2027

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/12044
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A method involves pattern etching a photoresist that is located on a wafer that contains a deposited seed layer to expose portions of the seed layer, plating the wafer so that plating metal builds up on only the exposed seed layer until the plating metal has reached an elevation above the seed layer that is at least equal to a thickness of the seed layer, removing the solid photoresist, and removing seed layer exposed by removal of the photoresist and plated metal until all of the exposed seed layer has been removed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.