Writing error diagnosis method for charged particle beam photolithography apparatus and charged particle beam photolithography apparatus
US7598504B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 29, 2007 |
| Grant date | Oct 6, 2009 |
| Priority date | — |
| Expiry date | May 20, 2028 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y40/00
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A writing error diagnosis method for a charged beam photolithography apparatus and a charged beam photolithography apparatus which can specify an error cause within a short period of time in occurrence of a pattern writing error are provided. The writing error diagnosis method for a charged beam photolithography apparatus is a writing error diagnosis method for a charged beam photolithography apparatus which irradiates a charged beam on a target object to write a desired pattern. Processing result data of a pattern writing circuit at a position where a pattern writing error occurs is collected after the pattern writing error occurs, and the collected processing result data of the pattern writing circuit is compared with correct data. The charged beam photolithography apparatus has means which realizes the diagnosis method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.