Patent · US Active

Image sensor

US7598583B2 · kind B2 · utility

3Cited by
6References
10Claims
0Family size

Assignee

Inventor

Key dates

Filing dateJul 24, 2007
Grant dateOct 6, 2009
Priority date
Expiry dateJul 24, 2027

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10F39/8063
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

An image sensor according to embodiments may include a first substrate having photodiode cells, a second substrate having a logic circuit, and connection electrodes that may electrically connect the photodiode cells with the logic circuit. In embodiments, more area may be available on the first substrate for photodiode cells and light loss may be reduced.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.