Methods and apparatus for a dual-metal magnetic shield structure
US7598596B2 · kind B2 · utility
10Cited by
3References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 21, 2006 |
| Grant date | Oct 6, 2009 |
| Priority date | — |
| Expiry date | Aug 31, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A shield structure for shielding an electromagnetic-field-susceptible region of a semiconductor component (e.g., a magnetoresistive random access memory, or “MRAM”) includes a stress-relief layer (e.g., electroplated Ni) formed over the semiconductor device in a shield region substantially corresponding to the electromagnetic-field-susceptible region, and a magnetic shield layer (e.g., an electroplated PERMALLOY or MUMETAL layer) mechanically coupled to the stress-relief layer within the shield region, wherein the magnetic shield layer has a stress condition that is substantially opposite of that of the stress-relief layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.