Optical emission spectroscopy process monitoring and material characterization
US7599048B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 21, 2007 |
| Grant date | Oct 6, 2009 |
| Priority date | — |
| Expiry date | Nov 26, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N2021/8416
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Methods and systems for control and monitoring processing of semiconductor materials with a focused laser beam. Laser light may be focused on a sample to excite optical emission at the sample surface during processing, which may include laser processing. Optical emission spectra produced may be analyzed for various properties effectively during the process. For example, process effects such as chemical composition analysis, species concentration, depth profiling, homogeneity characterization and mapping, purity, and reactivity may be monitored by optical spectral analysis. The wavelength may be selected to be appropriate for the process effect chosen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.