Integrated circuit, resistivity changing memory device, memory module and method of fabricating an integrated circuit
US7599211B2 · kind B2 · utility
2Cited by
4References
21Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 10, 2007 |
| Grant date | Oct 6, 2009 |
| Priority date | — |
| Expiry date | Sep 19, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49002
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
According to one embodiment of the present invention, an integrated circuit includes a plurality of resistivity changing memory cells, and a plurality of conductive elements being electrically connected to the resistivity changing memory cells, at least some of the conductive elements comprising copper.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.