Method of compensating photomask data for the effects of etch and lithography processes
US7600212B2 · kind B2 · utility
31Cited by
9References
55Claims
0Family size
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Key dates
| Filing date | Oct 2, 2006 |
| Grant date | Oct 6, 2009 |
| Priority date | — |
| Expiry date | May 3, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/36
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for synthesizing a photomask data set from a given target layout, including the following steps: (a) providing a set of target polygons for the target layout; (b) fitting a smooth curve to a target polygon of the set of target polygons, the curve having a set of etch-target points; (c) moving the etch target points according to a model of an etch process to produce a set of lithography-target points; and (d) synthesizing a photomask data set based on a model of a lithography process and the set of lithography-target points.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.