Methods of making thin film capacitors comprising a manganese doped barium titantate dielectric
US7601181B2 · kind B2 · utility
3Cited by
28References
11Claims
0Family size
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Key dates
| Filing date | Oct 25, 2007 |
| Grant date | Oct 13, 2009 |
| Priority date | — |
| Expiry date | Oct 25, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31678
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Described herein are methods for making articles comprising a dielectric layer formed from any solution composition that can form barium titanate during firing and containing manganese in an amount between 0.002 and 0.05 atom percent of the solution composition, wherein the dielectric layer has been formed on metal foil and fired in a reducing atmosphere.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.