Method for rapid, controllable growth and thickness, of epitaxial silicon films
US7601215B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 17, 2006 |
| Grant date | Oct 13, 2009 |
| Priority date | — |
| Expiry date | Nov 17, 2026 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B25/02
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of producing epitaxial silicon films on a c-Si wafer substrate using hot wire chemical vapor deposition by controlling the rate of silicon deposition in a temperature range that spans the transition from a monohydride to a hydrogen free silicon surface in a vacuum, to obtain phase-pure epitaxial silicon film of increased thickness is disclosed. The method includes placing a c-Si substrate in a HWCVD reactor chamber. The method also includes supplying a gas containing silicon at a sufficient rate into the reaction chamber to interact with the substrate to deposit a layer containing silicon thereon at a predefined growth rate to obtain phase-pure epitaxial silicon film of increased thickness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.