Method for producing a device comprising a structure equipped with one or more microwires or nanowires based on a Si and Ge compound by germanium condensation
US7601570B2 · kind B2 · utility
27Cited by
1References
20Claims
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Key dates
| Filing date | Aug 2, 2007 |
| Grant date | Oct 13, 2009 |
| Priority date | — |
| Expiry date | Oct 10, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/832
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method for producing a microelectronic device having one or more Si1−zGez based semiconductor wire(s) (with 0<z≦1), including:
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.