Integration of pre-S/D anneal selective nitride/oxide composite cap for improving transistor performance

US7601575B2 · kind B2 · utility

Assignee

• TEXAS INSTRUMENTS INCORPORATED · US

Inventors

• Haowen Bu · Plano, US
• Shashank S. Ekbote · San Diego, US
• Rajesh Khamankar · Coppell, US
• Shaoping Tang · Plano, US
• Freidoon Mehrad · Plano, US

Key dates

• Filing date: Mar 4, 2005
• Grant date: Oct 13, 2009
• Expiry date: Mar 4, 2025

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/902

Abstract

The present invention facilitates semiconductor device operation and fabrication by providing a cap-annealing process that improves channel electron mobility without substantially degrading PMOS transistor devices. The process uses an oxide/nitride composite cap to alter the active dopant profile across the channel regions. During an annealing process, dopants migrate out of the Si/SiO2 in a channel region thereby altering the dopant profile of the channel region. This altered profile generally improves channel mobility thereby improving transistor performance and permitting smaller density designs.