Semiconductor device with trench transistors and method for manufacturing such a device

US7601596B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Markus Zundel · Egmating, DE
• Franz Hirler · Isen, DE
• Rudolf Zelsacher · Klagenfurt, AT
• Erwin Bacher · Villach, AT

Key dates

• Filing date: Nov 16, 2006
• Grant date: Oct 13, 2009
• Expiry date: Apr 13, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/516

Abstract

According to one embodiment, a method for manufacturing a semiconductor device includes forming trenches in a first side of a semiconductor material and forming a thick oxide layer on the trenches and on the first side. A part of the first side and the trenches is masked using a first mask, and the semiconductor material is doped by implantation through the thick oxide layer while the first mask is present. At least part of the thick oxide layer is removed while the first mask remains.