Semiconductive device fabricated using subliming materials to form interlevel dielectrics
US7601629B2 · kind B2 · utility
4Cited by
9References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 20, 2005 |
| Grant date | Oct 13, 2009 |
| Priority date | — |
| Expiry date | May 29, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention provides a method of fabricating a semiconductive device [200]. In this embodiment, the method comprises depositing a hydrocarbon layer [294] over a semiconductive substrate, forming an interconnect structure [295, 297] within the hydrocarbon layer [294], and removing the hydrocarbon layer [294] by sublimation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.