Atomic layer deposited tantalum containing adhesion layer
US7601637B2 · kind B2 · utility
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36References
20Claims
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Key dates
| Filing date | Dec 24, 2008 |
| Grant date | Oct 13, 2009 |
| Priority date | — |
| Expiry date | Dec 24, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28562
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Apparatus and methods of fabricating an atomic layer deposited tantalum containing adhesion layer within at least one dielectric material in the formation of a metal, wherein the atomic layer deposition tantalum containing adhesion layer is sufficiently thin to minimize contact resistance and maximize the total cross-sectional area of metal, including but not limited to tungsten, within the contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.