Method of manufacturing LCD apparatus by using halftone exposure method
US7602456B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 16, 2007 |
| Grant date | Oct 13, 2009 |
| Priority date | — |
| Expiry date | Mar 7, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/136236
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention discloses a method of manufacturing a super large wide-angle super high-speed response LCD apparatus by using a photolithographic process for three times. The invention adopts a halftone exposure technology and a nitrogen ion doped technology to form a gate electrode, a common electrode, a pixel electrode and a contact pad, and then uses the halftone exposure technology to form a silicon (Si) island and a contact hole, and a general exposure technology to form a source electrode, a drain electrode and an alignment control electrode. A P-CVD apparatus is provided for forming a passivation layer into a film by using a masking deposition method, or an ink-jet coating method is used to coat a protective layer at a partial area, and a photolithographic process is performed for three times to manufacture a TFT matrix substrate of the super large wide-angle super high-speed response LCD.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.