Sakae Tanaka
84Patents
15h-index
40Co-inventors
84Inventor score
Filing activity: Feb 11, 1981 → May 30, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4960719A | Method for producing amorphous silicon thin film transistor array substrate | Electricity | 120 | Expired |
| US4796978A | Projection type liquid crystal displaying device | Physics | 65 | Expired |
| US5071779A | Method for producing a silicon thin film transistor | Electricity | 36 | Expired |
| US5047819A | Amorphous-silicon thin film transistor array substrate | Electricity | 33 | Expired |
| US4861142A | Projection type liquid crystal displaying device | Electricity | 32 | Expired |
| US5053354A | Method of fabricating a reverse staggered type silicon thin film transistor | Electricity | 28 | Expired |
| US4936658A | Projection type liquid crystal displaying device | Physics | 26 | Expired |
| US5017984A | Amorphous silicon thin film transistor array | Physics | 25 | Expired |
| US5045485A | Method for producing amorphous silicon thin film transistor array substrate | Electricity | 25 | Expired |
| US5091337A | Method of manufacturing amorphous-silicon thin-film transistors | Emerging Cross-Sectional Technologies | 24 | Expired |
| US7602456B2 | Method of manufacturing LCD apparatus by using halftone exposure method | Physics | 22 | Active |
| US5111261A | Silicon thin film transistor with an intrinsic silicon active layer formed within the boundary defined by the edges of the gate electrode and the impurity containing silicon layer | Electricity | 22 | Expired |
| US5034340A | Amorphous silicon thin film transistor array substrate and method for producing the same | Electricity | 22 | Expired |
| US5021850A | Silicon thin film transistor | Electricity | 21 | Expired |
| US10074709B1 | Display device | Electricity | 20 | Active |
| US4789899A | Liquid crystal matrix display device | Physics | 14 | Expired |
| US5005056A | Amorphous-silicon thin film transistor array substrate | Physics | 14 | Expired |
| US5034339A | Method for producing amorphous silicon thin film transistor array substrate | Electricity | 13 | Expired |
| US6833897B2 | IPS-LCD device with a color filter formed on an array substrate | Physics | 13 | Expired |
| US5114869A | Method for producing reverse staggered type silicon thin film transistor | Emerging Cross-Sectional Technologies | 13 | Expired |
| US11239449B2 | Organic electroluminescence element including carrier injection amount control electrode | Electricity | 12 | Active |
| US5109260A | Silicon thin film transistor and method for producing the same | Electricity | 11 | Expired |
| US4979006A | Reverse staggered type silicon thin film transistor | Electricity | 10 | Expired |
| US7016001B2 | MVA-LCD device with color filters on a TFT array substrate | Physics | 9 | Expired |
| US5065202A | Amorphous silicon thin film transistor array substrate and method for producing the same | Electricity | 8 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.