Controlled zone microwave plasma system
US7603963B2 · kind B2 · utility
1Cited by
17References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 2, 2006 |
| Grant date | Oct 20, 2009 |
| Priority date | — |
| Expiry date | Jan 25, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H1/475
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An apparatus and method for initiating a process gas plasma. A conductive plate having a plurality of conductive fingers is positioned in a microwave applicator. An arc forms between the conductive fingers to initiate the formation of a plasma. A transport mechanism may convey process materials through the plasma. A spray port may be provided to expel processed materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.