Patent · US Active

Film formation apparatus and method of using the same

US7604010B2 · kind B2 · utility

7Cited by
5References
12Claims
0Family size

Assignees

Inventors

Key dates

Filing dateAug 24, 2005
Grant dateOct 20, 2009
Priority date
Expiry dateOct 19, 2026

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02P70/50
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

A film formation apparatus for a semiconductor process includes a cleaning gas supply circuit, a concentration measuring section, and an information processor. The cleaning gas supply circuit is configured to supply a cleaning gas into a reaction chamber to perform cleaning of removing from an inner surface of the reaction chamber a by-product film derived from a film formation gas. The concentration measuring section is disposed in an exhaust system to monitor concentration of a predetermined component contained in exhaust gas from the reaction chamber. The information processor is configured to compare a measurement value obtained by the concentration measuring section with a preset value and to thereby determine an end point of the cleaning.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.