Mask pattern for semiconductor device fabrication, method of forming the same, method for preparing coating, composition for fine pattern formation, and method of fabricating semiconductor device
US7604911B2 · kind B2 · utility
2Cited by
2References
24Claims
0Family size
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Key dates
| Filing date | Dec 3, 2007 |
| Grant date | Oct 20, 2009 |
| Priority date | — |
| Expiry date | Dec 3, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/40
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A mask pattern for semiconductor device fabrication comprises a resist pattern formed on a semiconductor substrate, and an interpolymer complex film formed on the resist pattern, wherein the interpolymer complex film includes a network formed by a hydrogen bond between a proton donor polymer and a proton acceptor polymer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.