Photo-detector and related methods
US7605013B2 · kind B2 · utility
0Cited by
4References
6Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 13, 2008 |
| Grant date | Oct 20, 2009 |
| Priority date | — |
| Expiry date | Apr 18, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/48091
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An apparatus comprising at least one multilayer wafer which includes a device layer adjacent to a barrier layer, and the device layer includes at least two photoconductive regions separated by an etched channel extending through the device layer. In some instances the apparatus may be an accelerometer having two photodiodes formed on a silicon-on-insulator (SOI) wafer with the photodiodes defined by one or more etched channels extending through the device layer of the SOI wafer. Also disclosed are methods for forming such an apparatus.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.