Semiconductor device having strain-inducing substrate and fabrication methods thereof
US7605031B1 · kind B1 · utility
2Cited by
4References
19Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 23, 2008 |
| Grant date | Oct 20, 2009 |
| Priority date | — |
| Expiry date | Jul 23, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/221
Abstract
A semiconductor device includes a semiconductor substrate that includes a substrate layer having a first composition of semiconductor material. A source region, drain region, and a channel region are formed in the substrate, with the drain region spaced apart from the source region and the gate region abutting the channel region. The channel region includes a channel layer having a second composition of semiconductor material. Additionally, the substrate layer abuts the channel layer and applies a stress to the channel region along a boundary between the substrate layer and the channel layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.