Method of manufacturing interconnecting structure with vias
US7605085B2 · kind B2 · utility
12Cited by
33References
6Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Sep 18, 2006 |
| Grant date | Oct 20, 2009 |
| Priority date | — |
| Expiry date | Sep 18, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
First wirings and first dummy wirings are formed in a p-SiOC film formed on a substrate. A p-SiOC film is formed, and a cap film is formed on the p-SiOC film. A dual damascene wiring, including vias connected to the first wirings and the second wirings, is formed in the cap film and the p-SiOC film 22. Dummy vias are formed on the periphery of isolated vias.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.