Spin-transfer MRAM structure and methods
US7605437B2 · kind B2 · utility
22Cited by
1References
16Claims
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Key dates
| Filing date | Apr 18, 2007 |
| Grant date | Oct 20, 2009 |
| Priority date | — |
| Expiry date | Jul 11, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/01
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A spin-transfer MRAM bit includes a free magnet layer positioned between a pair of spin polarizers, wherein at least one of the spin polarizers comprises an unpinned synthetic antiferromagnet (SAF). The SAF may include two antiparallel fixed magnet layers separated by a coupling layer. To improve manufacturability, the layers of the SAF may be non-symmetrical (e.g., having different thicknesses or different inherent anisotropies) to assist in achieving proper alignment during anneal. The total magnetic moment of the SAF may be greater than that of the free magnet layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.